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Category: FETdriveDescription: EiceDRIVER™ 3 The phase gate driver IC, Infineon Infineon 3-phase 600V MOSFET, and IGBT gate driver IC are based on validated existing SOI technology. These sturdy devices have no parasitic thyristor structure and can prevent latch up under all normal operating conditions. The driver includes undervoltage and overcurrent detection and can be controlled by CMOS or LSTTL compatible signals as low as 3.3V. The maximum blocking voltage is 600V. Six independent drivers are controlled by 3.3V logic to detect undervoltage, with hysteresis overcurrent detection. MOSFET and IGBT drivers are included, Infineon (International Rectifier)73615+$12.022950+$11.5091200+$11.2214500+$11.14951000+$11.07752500+$10.99535000+$10.94397500+$10.8926 -
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Category: FETdriveDescription: Addendum for PCN Data Sheet 2004-018-A763510+$8.3460100+$7.9287500+$7.65051000+$7.63662000+$7.58105000+$7.51147500+$7.455810000+$7.4279
